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FDN338P View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name
Description
View to exact match
FDN338P
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
FDN338P Datasheet PDF : 4 Pages
1 2 3 4
20V P-Channel Enhancement Mode MOSFET
Output Characteristics_
10
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V
8
6
2V
4
2
0, 0.5, 1 V
1.5 V
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.5
0.4
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
0.1
0.0
0
2
4
6
8
10
ID - Drain Current (A)
Gate Charge
5
VDS = 6 V
ID = 2.8 A
4
3
2
1
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
JinYu
semiconductor
www.htsemi.com
FDN338P
Transfer Characteristics
10
TC = - 55_C
8
25_C
6
125_C
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
1000
Capacitance
800
600
Ciss
400
Coss
Crss
200
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 4.5 V
ID = 2.8 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
50
100
150
TJ - Junction Temperature (_C)
Date:2011/05
 

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