FDN338P View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FDN338P Datasheet PDF : 5 Pages
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September 2001
FDN338P
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –1.6 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V
RDS(ON) = 155 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.338
FDN338P
7’’
©2001 Fairchild Semiconductor Corporation
G
S
Ratings
–20
±8
–1.6
–5
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDN338P Rev F(W)
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