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FDG6308P View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FDG6308P
Fairchild
Fairchild Semiconductor Fairchild
FDG6308P Datasheet PDF : 5 Pages
1 2 3 4 5
Typical Characteristics
5
ID = -0.6A
4
3
2
VDS = -5V
-15V
-10V
1
0
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
100µs
1ms
10ms
100ms
0.1
VGS = -4.5V
SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
1s
DC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
200
160
120
80
40
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
SINGLE PULSE
RθJA = 415oC/W
24
TA = 25oC
18
12
6
0
0.0001 0.001
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 415 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDG6308P Rev B (W)
 

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