FDG6308 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FDG6308 Datasheet PDF : 5 Pages
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Typical Characteristics
2
VGS = -4.5V
-3.0V
-3.5V
1.6
-2.5V
1.2
0.8
-2.0V
-1.8V
0.4
0
0
0.5
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
2.25
2
VGS = -1.8V
1.75
-2.0V
1.5
-2.5V
1.25
-3.0V
-3.5V
1
-4.5V
0.75
0
0.5
1
1.5
2
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.5
1.4
ID = -0.6A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
2
VDS = -5V
1.5
TA = -55oC
25oC
125oC
1
0.5
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.2
ID = -0.3 A
1
0.8
0.6
TA = 125oC
0.4
TA = 25oC
0.2
1
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
0.001
TA = 125oC
25oC
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6308P Rev B (W)
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