FDG315N View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FDG315N Datasheet PDF : 5 Pages
| |||
Typical Characteristics (continued)
10
ID = 2A
8
6
VDS = 5V
10V
15V
4
2
0
0
1
2
3
4
5
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
300
f = 1MHz
250
VGS = 0 V
CISS
200
150
100
50
0
0
COSS
CRSS
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
RDS(ON) LIMIT
1
VGS = 10V
0.1
SINGLE PULSE
RθJA = 260oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
30
SINGLE PULSE
24
RθJA= 260oC/W
TA= 25oC
18
12
6
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.01
0.1
0.05
0.01
0.02
Single Pulse
0.005
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA =260°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1/ t 2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDG315N Rev. C
|
|
Share Link: 