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FCPF7N60NT View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FCPF7N60NT
Fairchild
Fairchild Semiconductor Fairchild
FCPF7N60NT Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
March 2013
FCP7N60N / FCPF7N60NT
N-Channel SupreMOS® MOSFET
600 V, 6.8 A, 520 mΩ
Features
• RDS(on) = 460 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
• Ultra Low Gate Charge (Typ.Qg = 17.8 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 91 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• LCD/LED TV and Monitor
• Lighting
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor®’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power converter
applications such as PFC, server/telecom power, FPD TV power,
ATX power and industrial power applications.
D
G DS
TO-220
G DS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP7N60N FCPF7N60NT
600
±30
6.8
6.8*
4.3
4.3*
(Note 1) 20.4
20.4
(Note 2)
79.4
6.8
0.6
100
(Note 3)
4.9
64.1
30.5
0.51
0.24
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Symbol
Parameter
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heak Sink ( Typical)
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
1
FCP7N60N / FCPF7N60NT Rev. C0
FCP7N60N
1.95
0.5
62.5
FCPF7N60NT
4.1
0.5
62.5
Unit
oC/W
www.fairchildsemi.com
 

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