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FCB20N60FTM View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FCB20N60FTM 600V N- CHANNELFRFET Fairchild
Fairchild Semiconductor Fairchild
FCB20N60FTM Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
FCB20N60F
600V N-CHANNEL FRFET
Features
• 650V @ TJ = 150°C
• Typ.Rds(on)=0.15:
• Fast RecoveryType (trr = 160ns)
• Ultra low gate charge (typ.Qg=75nC)
• Low effective output capacitance (typ.Coss.eff=165pF)
• 100% avalanche tested
D
December 2006
SuperFETTM
Description
SuperFETTM is,Farichild’s proprietary,new generation ofhigh
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss,provide superior switching performance,and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently,SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GS
AbsoluteMaxim um Ratings
Sym bol
Param eter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
-Continuous(TC = 25qC)
-Continuous(TC = 100qC)
-Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
PeakDiode Recoverydv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25qC)
-Derate above 25qC
TJ,TSTG
TL
Operatingand Storage Temperature Range
Maximum Lead Temperature for SolderingPurpose,
1/8”from Case for 5Seconds
Therm alCharacteristics
Sym bol
Param eter
RTJC
Thermal Resistance,Junction-to-Case
RTJA*
Thermal Resistance,Junction-to-Ambient*
RTJA
Thermal Resistance,Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB M ount)
©2006 Fairchild Semiconductor Corporation
1
FCB20N60F Rev.A2
G
S
FCB20N60F
600
20
12.5
60
r 30
690
20
20.8
50
208
1.67
-55 to +150
300
FCB20N60F
0.6
40
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/qC
qC
qC
Unit
qC/W
qC/W
qC/W
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