datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

ES1C-E3/5AT View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
ES1C-E3/5AT
Vishay
Vishay Semiconductors Vishay
ES1C-E3/5AT Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
Resistive or Inductive Load
0.2
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
80 90 100 110 120 130 140 150
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
30
8.3 ms Single Half Sine-Wave
25
20
15
10
5
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
ES1A thru ES1D
Vishay General Semiconductor
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
14
TJ = 25 °C
12
f = 1.0 MHz
Vsig = 50mVp-p
10
8
6
4
2
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Mounted on 0.2" x 0.2" (5 mm x 7 mm)
Copper Pad Areas
10
1
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Thermal Impedance
Revision: 27-Feb-13
3
Document Number: 88586
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]