EN29LV160AB-90BC View Datasheet(PDF) - Eon Silicon Solution Inc.

Part Name

Description

View to exact match

EN29LV160AB-90BC

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Eon Silicon Solution Inc. 

EN29LV160A

Figure 10. Alternate CE# Controlled Write Operation Timings

0x555 for Program

0x2AA for Erase

PA for Program

SA for Sector Erase

0x555 for Chip Erase

Addresses

VA

tWC

tAS

tAH

WE#

OE#

CE#

tGHEL

tWS

Data

RY/BY#

tRH

Reset#

tWH

tCP

tCPH

tDS

tDH

0xA0 for

Program

tCWHWH1 / tCWHWH2 / tCWHWH3

tBUSY

PD for Program

0x30 for Sector Erase

0x10 for Chip Erase

Status

DOUT

Notes:

PA = address of the memory location to be programmed.

PD = data to be programmed at byte address.

VA = Valid Address for reading program or erase status

Dout = array data read at VA

Shown above are the last two cycles of the program or erase command sequence and the last status read cycle

Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command

sequence.

Figure 11. DQ2 vs. DQ6

Enter

Embedded

Erase

WE#

Erase

Erase

Suspend

Enter Erase

Suspend

Program

Erase

Resume

Enter

Suspend

Read

Enter

Suspend

Program

Erase

Suspend

Read

Erase

Erase

Complete

DQ6

DQ2

This Data Sheet may be revised by subsequent versions 36 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2005/01/07

Share Link: