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EN29LV160AB-90TC View Datasheet(PDF) - Eon Silicon Solution Inc.

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EN29LV160AB-90TC Datasheet PDF : 43 Pages
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EN29LV160A
TABLE 15. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming
Time
Byte
Word
Erase/Program Endurance
Typ
0.5
17.5
8
8
16.8
8.4
1000K
Limits
Max
10
300
300
50.4
25.2
Unit
sec
sec
µs
µs
sec
cycles
Comments
Excludes 00H programming prior
to erasure
Excludes system level overhead
Minimum 1000K cycles
Table 16. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to Vss on all pins except I/O pins
(including A9, Reset and OE#)
Min
-1.0 V
Max
12.0 V
Input voltage with respect to Vss on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 17. 48-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
CIN
Input Capacitance
VIN = 0
6
7.5
COUT
Output Capacitance
VOUT = 0
8.5
12
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
Unit
pF
pF
pF
Table 18. DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
This Data Sheet may be revised by subsequent versions 32 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07
 

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