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EN29LV160AB-90TC View Datasheet(PDF) - Eon Silicon Solution Inc.

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EN29LV160AB-90TC Datasheet PDF : 43 Pages
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EN29LV160A
Table 11. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
ILI
ILO
ICC1
Input Leakage Current
Output Leakage Current
Supply Current (read) CMOS Byte
(read) CMOS Word
0VVIN Vcc
0VVOUT Vcc
CE# = VIL ; OE# = VIH ;
f = 5MHZ
±5
µA
±5
µA
9
16
mA
9
16
mA
ICC2
ICC3
Supply Current (Standby - TTL)
(Standby - CMOS)
Supply Current (Program or Erase)
CE# = VIH,
BYTE# = RESET# =
Vcc ± 0.3V
(Note 1)
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
Byte program, Sector or
Chip Erase in progress
0.4
1.0
mA
1
5.0
µA
20
30
mA
VIL
VIH
VOL
VOH
VID
IID
VLKO
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
IOL = 4.0 mA
IOH = -2.0 mA
IOH = -100 µA,
A9 = VID
-0.5
0.7 x
Vcc
0.85 x
Vcc
Vcc -
0.4V
10.5
2.3
0.8
V
Vcc ±
0.3
V
0.45
V
V
V
11.5
V
100
µA
2.5
V
Notes
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
they draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions 25 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07
 

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