datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

EN29LV160AB-90BI View Datasheet(PDF) - Eon Silicon Solution Inc.

Part Name
Description
View to exact match
EN29LV160AB-90BI Datasheet PDF : 43 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
EN29LV160A
When the Erase Suspend command is written during a sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
After the erase operation has been suspended, the system can read array data from or program
data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Normal read and write timings and command definitions apply. Reading at any address
within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See
“Write Operation Status” for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array
data within non-suspended sectors. The system can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation
Status” for more information. The Autoselect command is not supported during Erase Suspend
Mode.
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command are
ignored. Another Erase Suspend command can be written after the device has resumed erasing.
WRITE OPERATION STATUS
DQ7
DATA# Polling
The EN29LV160A provides DATA# polling on DQ7 to indicate the status of the embedded
operations. The DATA# polling feature is active during Byte Programming, Sector Erase, Chip
Erase, and Erase Suspend. (See Table 10)
When the embedded Programming is in progress, an attempt to read the device will produce the
complement of the data written to DQ7. Upon the completion of the Byte Programming, an attempt
to read the device will produce the true data written to DQ7. For the Byte Programming, DATA#
polling is valid after the rising edge of the fourth WE# or CE# pulse in the four-cycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7
output during the read cycles. For Chip Erase, the DATA# polling is valid after the rising edge of the
sixth WE# or CE# pulse in the six-cycle sequence. DATA# polling is valid after the last rising edge of
the WE# or CE# pulse for chip erase or sector erase.
DATA# Polling must be performed at any address within a sector that is being programmed or
erased and not a protected sector. Otherwise, DATA# polling may give an inaccurate result if the
address used is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when
the output enable (OE#) is low. This means that the device is driving status information on DQ7 at
one instant of time and valid data at the next instant of time. Depending on when the system
samples the DQ7 output, it may read the status of valid data. Even if the device has completed the
embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid.
The valid data on DQ0-DQ7 will be read on the subsequent read attempts.
The flowchart for DATA# Polling (DQ7) is shown on Flowchart 5. The DATA# Polling (DQ7) timing
diagram is shown in Figure 8.
RY/BY#: Ready/Busy
This Data Sheet may be revised by subsequent versions 16 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]