EFM301B View Datasheet(PDF) - Rectron Semiconductor

Part Name

Description

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EFM301B

SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER

Rectron Semiconductor 

RATING AND CHARACTERISTICS CURVES ( EFM301B THRU EFM307B )

50 W

NONINDUCTIVE

10 W

NONINDUCTIVE

trr

+0.5A

(+)

25 Vdc

(approx)

(-)

D.U.T

1

NON-

INDUCTIVE

(-)

PULSE

GENERATOR

(NOTE 2)

0

-0.25A

OSCILLOSCOPE

(+)

(NOTE 1)

NOTES: 1 Rise Time = 7ns max. Input Impedance =

1 megohm. 22pF.

2. Rise Time = 10ns max. Source Impedance =

50 ohms.

-1.0A

1cm

SET TIME BASE FOR 50/100 ns/cm

FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

3.0

1000

2.5

2.0

1.5

1.0

Single Phase

Half Wave 60Hz

Resistive or

Inductive Load

0.5

0 25 50 75

100 125 150 175

AMBIENT TEMPERATURE, (OC)

FIG.2 TYPICAL FORWARD CURRENT

DERATING CURVE

100 TA = 100 OC

10

TA = 75 OC

TA = 25 OC

1.0

0.1

0

20

40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG.3 TYPICAL REVERSE

CHARACTERISTICS

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