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DS_K6X8016C3B View Datasheet(PDF) - Samsung

Part Name
Description
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DS_K6X8016C3B Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
K6X8016C3B Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified.
Industrial Product: TA=-40 to 85°C, otherwise specified.
Automotive Product: TA=-40 to 125°C, otherwise specified.
2. Overshoot: VCC+3.0V in case of pulse width 30ns.
3. Undershoot: -3.0V in case of pulse width 30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Min
4.5
0
2.2
-0.53)
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
Vcc+0.52)
V
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1
-
1 µA
Output leakage current
ILO CS=VIH, OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1 µA
Operating power supply current ICC IIO=0mA, CS=VIL, WE=VIH, VIN=VIH or VIL
-
-
6 mA
Average operating current
ICC1 Cycle time=1µs, 100% duty, IIO=0mA, CS0.2V, VIN0.2V or
-
VINVCC-0.2V
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, VIN=VIL or VIH -
- 7 mA
- 35 mA
Output low voltage
VOL IOL = 2.1mA
-
- 0.4 V
Output high voltage
VOH IOH = -1.0mA
2.4 -
-
V
Standby Current(TTL)
ISB CS=VIH, Other inputs=VIH or VIL
-
- 0.4 mA
Standby Current(CMOS)
ISB1 CSVcc-0.2V, Other inputs=0~Vcc
K6X8016C3B-B -
K6X8016C3B-F -
- 25
- 25 µA
K6X8016C3B-Q -
- 40
4
Revision 1.0
September 2003
 

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