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G10N120BN View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
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G10N120BN
Fairchild
Fairchild Semiconductor Fairchild
G10N120BN Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 25oC
ICE = 10A
VCE = 960V
VGE = 15V
RG = 10
L = 2mH
Test Circuit (Figure 18)
-
23
26
ns
-
11
15
ns
-
165
210
ns
-
100
140
ns
-
0.32
0.4
mJ
Turn-On Energy (Note 5)
EON2
-
0.85
1.1
mJ
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = 10A
VCE = 960V
VGE = 15V
RG = 10
L = 2mH
Test Circuit (Figure 18)
-
0.8
1.0
mJ
-
21
25
ns
-
11
15
ns
-
190
250
ns
-
140
200
ns
-
0.4
0.5
mJ
Turn-On Energy (Note 5)
EON2
-
1.75
2.3
mJ
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
EOFF
RθJC
-
1.1
1.4
mJ
-
-
0.42
oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
Typical Performance Curves Unless Otherwise Specified
35
VGE = 15V
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
60
50
TJ = 150oC, RG = 10, VGE = 15V, L = 400µH
40
30
20
10
0
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
 

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