S2B View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
S2B Datasheet PDF : 3 Pages
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Discrete POWER & Signal
Technologies
Features
• Easy pick and place.
• Low forward Voltage Drop.
• High Current Capability.
• High Surge Current Capability.
S2A - S2M
0.083 (2.108)
0.075 (1.905)
2
0.185 (4.699)
0.160 (4.064)
1
0.155 (3.937)
0.130 (3.302)
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
0.220 (5.588)
0.200 (5.080)
0.096 (2.438)
0.083 (2.108)
1.5 Ampere Glass Passivated Rectifiers
0.050 (1.270) 0.008 (0.203)
0.030 (0.762) 0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
IO
if(surge)
PD
RθJC
Tstg
TJ
Parameter
Average Rectified Current
@ TA = 100°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case **
Storage Temperature Range
Operating Junction Temperature
Value
1.5
50
2.35
18.8
16
-65 to +150
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Device
2A
2B
2D
2G
2J
2K
Peak Repetitive Reverse Voltage
50
100
200
400
600
800
Maximum RMS Voltage
35
70
140
280
420
560
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage @ 1.5 A
50
100
200
400
600
800
1.0
125
1.15
Maximum Reverse Recovery Time
2.0
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical Junction Capacitance
30
VR = 4.0 V, f = 1.0 MHz
Units
A
A
W
mW/°C
°C/W
°C
°C
2M
1000
700
1000
Units
V
V
V
µA
µA
V
µS
pF
©1999 Fairchild Semiconductor Corporation
S2A-S2M, Rev. A
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