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CXK5T8512TN-12LLX View Datasheet(PDF) - Sony Semiconductor

Part NameDescriptionManufacturer
CXK5T8512TN-12LLX 65536-word × 8-bit High Speed CMOS Static RAM Sony
Sony Semiconductor Sony
CXK5T8512TN-12LLX Datasheet PDF : 10 Pages
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Data retention waveform
• Low supply voltage data retention waveform (1) (CE1 contol)
tCDRS
Data retention mode
tR
VCC
2.7V
VIH
VDR
CE1
GND
CE1 ≥ VCC – 0.2V
• Low supply voltage data retention waveform (2) (CE2 contol)
VCC
2.7V
CE2
VDR
Data retention mode
tCDRS
tR
VIL
GND
CE2 ≤ 0.2V
CXK5T8512TM/TN
Data Retention Characteristics
Item
Symbol
Test conditions
Min.
Data retention voltage
VDR
∗1
2.0
Data retention current
ICCDR1 VCC = 3.0V∗1
ICCDR2 VCC = 2.0 to 3.6V∗1
–25 to +85°C —
–25 to +70°C —
+25°C
—
—
Data retention setup time tCDRS Chip disable to data retention mode
0
Recovery time
tR
5
∗1 CE1 ≥ Vcc – 0.2V, CE2 ≥ Vcc – 0.2V (CE1 control) or CE2 ≤ 0.2V (CE2 control)
∗2 Vcc = 3.3V, Ta = 25°C
(Ta = –25 to +85°C)
Typ. Max. Unit
—
3.6 V
—
12
—
6 ÂľA
0.2
—
0.24∗2 14 µA
—
— ns
—
— ms
–9–
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