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CXK5T8512TN View Datasheet(PDF) - Sony Semiconductor

Part NameDescriptionManufacturer
CXK5T8512TN 65536-word 8-bit High Speed CMOS Static RAM Sony
Sony Semiconductor Sony
CXK5T8512TN Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CXK5T8512TM/TN
• Write cycle (3) : CE2 control
Address
OE
CE1
CE2
WE
Data in
tWC
tAW
tCW
tAS
tCW
tWR1 (3)
tWP
tDW
tDH
Data valid
Data out
High impedance
1 Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
2 Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
3 tWR1 is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until
the end of the write cycle.
–8–
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