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CXK5T8512TN View Datasheet(PDF) - Sony Semiconductor

Part NameDescriptionManufacturer
CXK5T8512TN 65536-word × 8-bit High Speed CMOS Static RAM Sony
Sony Semiconductor Sony
CXK5T8512TN Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CXK5T8512TM/TN
DC Recommended Operating Conditions
Item
Symbol
VCC = 2.7 to 3.6V
Min.
Typ.
Max.
Supply voltage
VCC
2.7
3.3
Input high voltage
VIH
2.4
—
Input low voltage
VIL
–0.3∗1
—
∗1 VIL = –3.0V Min. for pulse width less than 50ns.
3.6
VCC + 0.3
0.4
(Ta = –25 to +85°C, GND = 0V)
VCC = 3.3V Âą 0.3V
Unit
Min.
Typ.
Max.
3.0
3.3
3.6
2.2
–0.3∗1
—
VCC + 0.3 V
—
0.6
Electrical Characteristics
• DC Characteristics
Item
Symbol
(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)
Test conditions
Min. Typ.∗1 Max. Unit
Input leakage current
ILI
VIN = GND to VCC
–1
—
+1 ÂľA
Output leakage current
ILO
CE1 = VIH or CE2 = VIL or
OE = VIH or WE = VIL
VI/O = GND to VCC
–1
—
+1 ÂľA
Operating power supply
current
ICC1
ICC2
Average operating current
ICC3
CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA
Min. cycle
duty = 100%
IOUT = 0mA
Cycle time 1Âľs
duty = 100%
IOUT = 0mA
CE1 ≤ 0.2V
CE2 ≥ Vcc – 0.2V
VIL ≤ 0.2V
VIH ≥ Vcc – 0.2V
10LLX
12LLX
—
1
3 mA
—
25∗2 35∗3
mA
—
25
35
—
5
10 mA
Standby current
CE2 ≤ 0.2V
–25 to +85°C —
—
14
ISB1
{or
CE1 ≥ Vcc – 0.2V –25 to +70°C
CE2 ≥ Vcc – 0.2V +25°C
—
—
—
0.24
7 ÂľA
—
ISB2
CE1 = VIH or CE2 = VIL
— 0.12 1.4 mA
Output high voltage
VOH
IOH = –2.0mA
2.4
—
—V
Output low voltage
VOL
IOL = 2.0mA
∗1 VCC = 3.3V, Ta = 25°C
∗2 ICC2 = 30mA for 3.3V operation (VCC = 3.3V ± 0.3V)
∗3 ICC2 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)
—
—
0.4 V
–3–
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