CXK5T16100TM-12LLX View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

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CXK5T16100TM-12LLX

65536-word × 16-bit High Speed CMOS Static RAM

Sony Semiconductor 

• Write cycle (3) : UB, LB control

Address

OE

CE

tAS

UB, LB

WE

Data in

Data out

CXK5T16100TM

tWC

tAW

tCW

tBW

tWR1 (∗3)

tWP

tDW

tDH

Data valid

High impedance

∗1 Write is executed when all of the CE, WE and (UB and, or LB) are at low simultaneously.

∗2 Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.

∗3 tWR1 (for I/O1 to 8) is tested from either the rising edge of CE or LB, whichever comes earlier, until the end

of the write cycle.

tWR1 (for I/O9 to 16) is tested from either the rising edge of CE or UB, whichever comes earlier, until the end

of the write cycle.

–8–

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