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FDS8333C View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FDS8333C 30V N & P-Channel PowerTrench® MOSFETs Fairchild
Fairchild Semiconductor Fairchild
FDS8333C Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
BV DSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF /IGSSR Gate–Body Leakage, Forward
IGSSF /IGSSR Gate–Body Leakage, Reverse
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
Q1
Q2
V GS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
Q1
On–Resistance
Q2
ID(on)
On–State Drain Current
Q1
Q2
gFS
Forward Transconductance Q1
Q2
Dynamic Characteristics
Ciss
Input Capacitance
Q1
Q2
Coss
Output Capacitance
Q1
Q2
Crss
Reverse Transfer Capacitance Q1
Q2
RG
Gate Resistance
Q1
Q2
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
Q1
Q2
tr
Turn–On Rise Time
Q1
Q2
td(off)
Turn–Off Delay Time
Q1
Q2
tf
Turn–Off Fall Time
Q1
Q2
Qg
Total Gate Charge
Q1
Q2
Qgs
Gate–Source Charge
Q1
Q2
Qgd
Gate–Drain Charge
Q1
Q2
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
Q1 30
Q2 –30
ID = 250 µA,Ref. to 25°C Q1
ID = –250 µA,Ref. to 25°C Q2
VDS = 24 V, VGS = 0 V Q1
VDS = –24 V, VGS = 0 V Q2
VGS = ± 16 V, VDS = 0 V
VGS = ± 20V , VDS = 0 V
VDS = VGS, ID = 250 µA
1
VDS = VGS, ID = –250 µA
–1
ID = 250 µA,Ref. To 25°C Q1
ID = –250 µA,Ref. to 25°C Q2
VGS = 10 V, ID = 4.1 A
VGS = 4.5 V, ID = 3.2 A
VGS = 10 V, ID = 4.1 A TJ=125°C
VGS = –10 V, ID = –3.4 A
VGS = – 4.5 V, ID = –2.5 A
VGS = –10V,ID = –3.4A, TJ=125°C
VGS = 10 V, VDS = 5 V
10
VGS = –10 V, VDS = –5 V
–5
VDS = 5 V ID = 4.1 A
VDS = –5 V ID = –3.4A
VDS=10 V, V GS= 0 V, f=1.0MHz
VDS=–10 V, V GS= 0 V, f=1.0MHz
VDS=10 V, V GS= 0 V, f=1.0MHz
VDS=–10 V, V GS= 0 V, f=1.0MHz
VDS=10 V, V GS= 0 V, f=1.0MHz
VDS=–10 V, V GS= 0 V, f=1.0MHz
VGS= 15 mV, f=1.0MHz
VGS=–15 mV, f=1.0MHz
For Q1:
VDS =10 V, IDS= 1 A
VGS= 4.5 V, RGEN = 6
For Q2:
VDS =–10 V, IDS= –1 A
VGS= –4.5 V, RGEN = 6
For Q1:
VDS =10 V, IDS= 4.1 A
VGS= 4.5 V, RGEN = 6
For Q2:
VDS =–10 V, I DS= –3.4 A
VGS= –4.5 V,
V
25
–22
mV/°C
1
–1
µA
±100 nA
±100 nA
1.7 3
V
–1.8 –3
–4.2
3.7
mV/°C
67 80
m
81 130
103 145
105 130
167 200
147 220
A
9
S
5
282
pF
185
49
pF
56
20
pF
26
2.3
–9.6
4.5 9
ns
4.5 9
6
12
ns
13 23
19 34
ns
11 20
1.5 3
ns
2
4
4.7 6.6
nC
4.1 5.7
0.9
nC
0.8
0.6
nC
0.4
FDS8333C Rev C (W)
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