BUZ11_NR4941 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

View to exact match

BUZ11_NR4941

N-Channel Power MOSFET 50V, 30A, 40 mΩ

Fairchild Semiconductor 

Data Sheet

BUZ11

September 2013 File Number 2253.2

N-Channel Power MOSFET

50V, 30A, 40 mΩ

This is an N-Channel enhancement mode silicon gate power

field effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Formerly developmental type TA9771.

Ordering Information

PART NUMBER

PACKAGE

BRAND

BUZ11_NR4941 TO-220AB

BUZ11

NOTE: When ordering, use the entire part number.

Features

• 30A, 50V

• rDS(ON) = 0.040Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

©2001 Fairchild Semiconductor Corporation

BUZ11 Rev. C0

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