BZX84C33LT1/T3G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
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BZX84C33LT1/T3G Datasheet PDF : 7 Pages
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BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device
Device
Marking
VZ (Volts) @ IZT = 5 mA
(Note 4)
Min Nom Max
ZZT (W) @
IZT = 5 mA
(Note 4)
Max
Max Reverse
Leakage
Current
IR
VR
@
mA
Volts
qVZ
(mV/k)
@ IZT = 5 mA
Min
Max
BZX84B3V3LT1G
T2A
3.23
3.3
3.37
95
5
1
−3.5
0
BZX84B4V7LT1G
T10
4.61
4.7
4.79
80
3
2
−3.5
0.2
BZX84B5V1LT1G
T11
5.00
5.1
5.20
60
2
2
−2.7
1.2
BZX84B5V6LT1G
T12
5.49
5.6
5.71
40
1
2
−2
2.5
BZX84B6V2LT1G
T13
6.08
6.2
6.32
10
3
4
0.4
3.7
BZX84B6V8LT1G
T14
6.66
6.8
6.94
15
2
4
1.2
4.5
BZX84B7V5LT1G
T15
7.35
7.5
7.65
15
1
5
2.5
5.3
BZX84B8V2LT1G
T16
8.04
8.2
8.36
15
0.7
5
3.2
6.2
BZX84B9V1LT1G, T3G
T17
8.92
9.1
9.28
15
0.5
6
3.8
7
BZX84B10LT1G
T2E
9.8
10
10.2
20
0.2
7
4.5
8
BZX84B12LT1G
T18
11.8
12
12.2
25
0.1
8
6
10
BZX84B15LT1G
T22
14.7
15
15.3
30
0.05
10.5
9.2
13
BZX84B16LT1G
T19
15.7
16
16.3
40
0.05
11.2
10.4
14
BZX84B18LT1G
T20
17.6
18
18.4
45
0.05
12.6
12.4
16
BZX84B22LT1G
T24
21.6
22
22.4
55
0.05
15.4
16.4
20
BZX84B24LT1G
T25
23.5
24
24.5
70
0.05
16.8
18.4
22
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
C (pF)
@ VR =0,
f = 1 MHz
450
260
225
200
185
155
140
135
130
130
130
110
105
100
85
80
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device*
Device
Marking
VZ (Volts) @ IZT = 2 mA
(Note 4)
Min Nom Max
ZZT (W) @
IZT = 2 mA
(Note 4)
Max
Max Reverse
Leakage
Current
IR
VR
@
mA
Volts
qVZ
(mV/k)
@ IZT = 2 mA
Min
Max
BZX84B27LT1G
T27
26.5
27
27.5
80
0.05
18.9
21.4
25.3
*Includes SZ-prefix devices where applicable.
C (pF)
@ VR =0,
f = 1 MHz
70
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