CD13001B View Datasheet(PDF) - Continental Device India Limited
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Description
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CD13001B Datasheet PDF : 3 Pages
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
IS/ISO 9002
Lic# QSC/L- 000019.2
CD13001
TO - 92
Plastic Package
ABSOLUTE MAXIMUM RATING (Ta =25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Peak (1)
ICM
Collector Power Dissipation
PC
Operating and Storage Junction
Tj, Tstg
Temperature Range
(1) Pulse Test: Pulse Width = 5ms, Duty Cycle<10%
VALUE
500
400
9.0
0.5
1.5
900
- 55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
Transition Frequency
Fall Time
Storage Time
hFE* Classifications
Note: Product is pre selected in
DC current gain (Groups A to F).
CDIL reserves the right to ship
any of the groups according to
production availability.
MARKING
SYMBOL
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE*
hFE
VCE(sat)
TEST CONDITION
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=500V, IE = 0
VCE=400V, IB = 0
VEB=9V, IC=0
VCE=20V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
MIN TYP MAX
500
400
9
100
200
100
10
40
5
0.5
VBE(sat)
IC=50mA, IB=10mA
1.2
fT
VCE=20V,IC=20mA,f=1MHz 8
tf
IC=50mA, IB1= -1B2=5mA
0.3
ts
VCC=45V
1.5
A
10-15
B
15-20
C
20-25
D
25-30
E
30-35
CD
13001
A
CD
13001
B
CD
13001
C
CD
13001
D
CD
13001
E
UNIT
V
V
V
A
mW
ºC
UNIT
V
V
V
µA
µA
V
V
MHz
µs
F
35-40
CD
13001
F
Continental Device India Limited
Data Sheet
Page 1 of 3
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