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CD0603-S0175R View Datasheet(PDF) - Bourns, Inc

Part Name
Description
View to exact match
CD0603-S0175R Datasheet PDF : 0 Pages
*RoHS COMPLIANT
Features
Lead free as standard
RoHS compliant*
Leadless
High speed
Applications
Cellular phones
PDAs
Desktop PCs and notebooks
Digital cameras
MP3 players
Switching Chip Diode Series - 0603 / 1005
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current
of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with
Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government
regulations on lead-free components.
Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes
roll away much more difficult.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R
Unit
Forward Voltage (Max.)
VF
Capacitance Between Terminals (Max.)
CT
Reverse Recovery Time (Max.)
trr
Reverse Current (Max.)
IR
1.00
(If = 100 mA)
1.00
(If = 50 mA)
1.00
(If = 100 mA)
V
4
(f = 100 MHz, Vr = 1 V DC)
pF
4
(Vr = 6V, If = 10 mA, RL = 50 )
nS
0.1
(Vr = 80 V)
2.5
(Vr = 75 V)
0.05
(Vr = 75 V)
µA
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Forward Current, Surge Peak
Power Dissipation - CD0603
Power Dissipation - CD1005
Storage Temperature
Junction Temperature
Symbol
CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R
Unit
VRRM
90
100
VR
80
75
Io
100
150
Isurge
1*
4**
PD
150
300
150
300
90
V
80
V
100
mA
1*
A
150
300
mW
TSTG
-40 to +125
°C
TJ
-40 to +125
°C
* Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
** Condition: 1.0 µs single half sine-wave superimposed on rate load
(JEDEC method).
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
How To Order
CD 0603 - S 01 80 R
Common Code
Chip Diode
Package
• 0603
• 1005
Model
S = High Speed Switching
Average Forward
01 = 100 mA
Current
(Io)
Code
015 = 150 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage
80 = 80 V
(VR)
Code
75 = 75 V
Reverse Current Suffix
R = Low Leakage IR (CDxxxx-S0180R)
 

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