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CD1005-B0230R View Datasheet(PDF) - Bourns, Inc

Part Name
Description
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CD1005-B0230R Datasheet PDF : 0 Pages
CD0603/1005 Schottky Barrier Chip Diode Series
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Repetitive Peak
Reverse Voltage
Reverse Voltage
Average Forward Current
Forward Current,
Surge Peak
Power Dissipation
Storage Temperature
Junction Temperature
VRRM
VR
Io
Isurge
PD
TSTG
TJ
CD0603-
B00340
45
40
30
500*
CD0603-
B0130L
35
30
100
1000*
CD0603-
B0140L
45
40
100
1000*
CD0603-
B0140R
45
40
100
1000*
150
-40 to +125
-40 to +125
CD0603-
B0230
35
30
200
2000*
CD0603-
B0240
Unit
45
V
40
V
200
mA
2000*
mA
mW
°C
°C
Parameter
Symbol
CD1005-
B00340
CD1005-
B0130L
CD1005-
B0140L
CD1005-
B0140R
CD1005-
B0230
CD1005-
B0240
Unit
Repetitive Peak
Reverse Voltage
VRRM
45
35
45
45
35
45
V
Reverse Voltage
Average Forward Current
Forward Current,
Surge Peak
VR
Io
Isurge
40
30
500*
30
100
1000*
40
100
1000*
40
100
1000*
30
200
3000*
40
V
200
mA
3000*
mA
Power Dissipation
PD
200
250
250
250
250
250
mW
Storage Temperature
Junction Temperature
TSTG
TJ
-40 to +125
°C
-40 to +125
°C
* Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
 

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