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BZW0P10 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
BZW0P10
Vishay
Vishay Semiconductors Vishay
BZW0P10 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BZW04P-5V8 thru BZW04-376
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
VWM
PPPM
PD
IFSM (uni-directional only)
TJ max.
5.8 V to 376 V
400 W
1.5 W
40 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use B suffix (e.g.
BZW04P-6V4B).
Electrical characteristics apply in both directions.
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Note: BZW04-213(B) ~ BZW04-376(B) for commercial grade only
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
PPPM
400
W
IPPM
See next table
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
PD
1.5
W
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)
IFSM
40
A
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)
VF
3.5/5.0
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) VF = 3.5 V for BZW04P(-)188 and below; VF = 5.0 V for BZW04P(-)213 and above
Document Number: 88316 For technical questions within your region, please contact one of the following:
Revision: 22-Oct-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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