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BYG20JHE3/TR View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
BYG20JHE3/TR
Vishay
Vishay Semiconductors Vishay
BYG20JHE3/TR Datasheet PDF : 5 Pages
1 2 3 4 5
BYG20D thru BYG20J
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF
trr
ER
TJ max.
1.5 A
200 V to 600 V
30 A
1.0 µA
1.4 V
75 ns
20 mJ
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristics
• Ultrafast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG20D
Device marking code
BYG20D
Maximum repetitive peak reverse voltage
VRRM
200
Average forward current
IF(AV)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range
ER
TJ, TSTG
BYG20G
BYG20G
400
1.5
30
20
- 55 to + 150
BYG20J
BYG20J
600
UNIT
V
A
A
mJ
°C
Document Number: 88958 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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