BY12 View Datasheet(PDF) - Shenzhen Taychipst Electronic Co., Ltd
Part Name
Description
View to exact match
BY12 Datasheet PDF : 2 Pages
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High Voltage Silicon Rectifier Diodes
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
BY 4 THRU BY 16
4000V-16000V 1.0A-0.3A
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and Characteristics
Type
BY4
Rep. peak reverse volt. Surge peak reverse volt. Max. forward current
Period. Spitzensperrspg. Stoßspitzensperrspg. Dauergrenzstrom
VRRM [V]
VRSM [V]
IFAV [A] 1)
4000
4000
1.0
BY6
6000
6000
1.0
BY8
8000
8000
0.5
BY12
12000
12000
0.5
BY16
16000
16000
0.3
Forward volt.
Durchlass-Spg.
VF [V] 2)
< 4.0
< 6.0
< 8.0
< 10.0
< 15.0
Leakage Current
Sperrstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Tj = 25°C
Tj = 100°C
TA = 25°C
V = VRRM
V = VRRM
IFSM
TA = 25°C i2t
Tj
TS
thA
< 1 µA
< 25 µA
100 A
50 A2s
-50...+150°C
-50...+150°C
< 25 K/W 1)
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
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