datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BY229F View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BY229F
Philips
Philips Electronics Philips
BY229F Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY229F, BY229X series
I
F
dI
F
dt
trr
time
Qs
I
R
I
rrm
25%
100%
Fig.1. Definition of trr, Qs and Irrm
PF / W
20
Vo = 1.25 V
Rs = 0.03 Ohms
15
BY329
Ths(max) / C
54
D = 1.0
0.5
78
10
0.2
102
0.1
5
I
tp
D
=
tp
T
126
T
t
0
150
0
2
4
6
8
10
12
IF(AV) / A
Fig.2. Maximum forward dissipation, PF = f(IF(AV));
square wave current waveform; parameter D = duty
cycle = tp/T.
PF / W
15
Vo = 1.25 V
Rs = 0.03 Ohms
10
5
BY329
Ths(max) / C
78
a = 1.57
1.9
2.2
102
2.8
4
126
IFS(RMS) / A
80
BY229
70
IFSM
60
50
40
30
20
10
0
1ms
10ms
0.1s
1s
10s
tp / s
Fig.4. Maximum non-repetitive rms forward current.
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior
to surge with reapplied VRWM.
IF / A
30
Tj = 150 C
Tj = 25 C
20
BY229F
10
typ
max
0
0
0.5
1
1.5
2
VF / V
Fig.5. Typical and maximum forward characteristic;
IF = f(VF); parameter Tj
Qs / uC
10
Tj = 150 C
Tj = 25 C
1
BY329
IF = 10 A
10 A
2A
1A
2A
1A
0
150
0
2
4
6
8
IF(AV) / A
Fig.3. Maximum forward dissipation, PF = f(IF(AV));
sinusoidal current waveform; parameter a = form
factor = IF(RMS)/IF(AV).
September 1998
3
0.1
1
10
100
-dIF/dt (A/us)
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
Rev 1.200
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]