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BUZ110S View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ110S
Infineon
Infineon Technologies Infineon
BUZ110S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 110S
Avalanche Energy EAS = f (Tj)
parameter: ID = 80 A, VDD = 25 V
RGS = 25
500
mJ
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 140 ˚C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
Typ. gate charge
VGS = f (QGate)
parameter: ID puls = 80 A
BUZ110S
16
V
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0
20 40
60 80 100 nC 130
QGate
BUZ110S
66
V
64
62
60
58
56
54
52
50
-60 -20 20 60 100 140 ˚C 200
Tj
Data Book
8
05.99
 

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