datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BUZ110SE3045A View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ110SE3045A
Infineon
Infineon Technologies Infineon
BUZ110SE3045A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 110S
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area1)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
-
- 0.75 K/W
-
-
62
-
-
62
-
-
40
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 200 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 ˚C
VDS = 50 V, VGS = 0 V, Tj = 150 ˚C
V(BR)DSS 55
-
-V
VGS(th)
2.1
3
4
I DSS
µA
-
0.1
1
-
- 100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 66 A
I GSS
RDS(on)
-
10 100 nA
- 0.009 0.01
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book
2
05.99
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]