BUZ110SE3045A View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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BUZ110SE3045A

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 110S

SIPMOS Power Transistor

Features

• N channel

• Enhancement mode

• Avalanche rated

Product Summary

Drain source voltage

Drain-Source on-state resistance

Continuous drain current

• dv/dt rated

• 175 ˚C operating temperature

VDS

55 V

RDS(on) 0.01 Ω

ID

80 A

Type

BUZ110S

BUZ110S E3045A

BUZ110S E3045

Package Ordering Code Packaging

P-TO220-3-1 Q67040-S4005-A2 Tube

P-TO263-3-2 Q67040-S4005-A6 Tape and Reel

P-TO263-3-2 Q67040-S4005-A5 Tube

Pin 1 Pin 2 Pin 3

G

D

S

Maximum Ratings, at Tj = 25 ˚C unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TC = 25 ˚C, limited by bond wire

TC = 100˚C

Pulsed drain current

IDpulse

TC = 25 ˚C

Avalanche energy, single pulse

EAS

ID = 80 A, VDD = 25 V, RGS = 25 Ω

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

EAR

dv/dt

IS = 80 A, VDS = 40 V, di/dt = 200 A/µs,

Tjmax = 175 ˚C

Gate source voltage

VGS

Power dissipation

Ptot

TC = 25 ˚C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Tj , Tstg

Value

80

66

320

460

20

6

±20

200

-55... +175

55/175/56

Unit

A

mJ

kV/µs

V

W

˚C

Data Book

1

05.99

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