BUZ350 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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BUZ350 Datasheet PDF : 8 Pages
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BUZ 350
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 14 A, VGS = 10 V
0.38
Ω
0.32
RDS (on)
0.28
0.24
0.20
98%
0.16
typ
0.12
0.08
0.04
0.00
-60
-20
20
60
100 ˚C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
V
GS(th)
3.6
3.2
98%
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
20
60
100 ˚C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 2
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 2
nF
C
10 1
A
IF
Ciss
10 1
10 0
Coss
Crss
10 -1
0
5 10 15 20 25 30 V 40
VDS
Data Sheet
7
10 0
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
05.99
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