BUZ350 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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BUZ350

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 350

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 ˚C

-

Inverse diode direct current,pulsed

ISM

TC = 25 ˚C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 44 A

-

Reverse recovery time

trr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

A

-

22

-

88

V

1.2

1.7

ns

180

-

µC

1.2

-

Data Sheet

4

05.99

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