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BUZ345 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ345
Infineon
Infineon Technologies Infineon
BUZ345 Datasheet PDF : 0 Pages
BUZ 345
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 26 A, VGS = 10 V
0.14
0.12
RDS (on)0.11
0.10
0.09
0.08
0.07
0.06
98%
typ
0.05
0.04
0.03
0.02
0.01
0.00
-60
-20
20
60
100 ˚C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
3.2
98%
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
20
60
100 ˚C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 3
nF
C
10 0
Ciss
Coss
A
IF
10 2
Crss
10 -1
10 -2
0
5 10 15 20 25 30 V 40
VDS
Data Sheet
7
10 1
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
05.99
 

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