BUZ32H View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BUZ32H

SIPMOS® Power Transistor

Infineon Technologies 

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

BUZ 32 H

Pin 1

G

Pin 2

D

Pin 3

S

Type

BUZ 32 H

VDS

200 V

ID

9.5 A

RDS(on)

0.4 Ω

Maximum Ratings

Parameter

Continuous drain current

TC = 29 ˚C

Pulsed drain current

TC = 25 ˚C

Avalanche current,limited by Tjmax

Avalanche energy,periodic limited by Tjmax

Avalanche energy, single pulse

ID = 9.5 A, VDD = 50 V, RGS = 25 Ω

L = 2 mH, Tj = 25 ˚C

Gate source voltage

Power dissipation

TC = 25 ˚C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Package

PG-TO-220-3

Pb-free

Yes

Symbol

ID

IDpuls

IAR

EAR

EAS

VGS

Ptot

Tj

Tstg

RthJC

RthJA

Values

Unit

A

9.5

38

9.5

6.5

mJ

120

± 20

V

W

75

-55 ... + 150 ˚C

-55 ... + 150

≤ 1.67

K/W

75

E

55 / 150 / 56

Rev. 2.4

Page 1

2009-11-10

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