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Part Name
Description
BUZ50B View Datasheet(PDF) - Siemens AG
Part Name
Description
View to exact match
BUZ50B
SIPMOS® Power Transistor
Siemens AG
BUZ50B Datasheet PDF : 9 Pages
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BUZ 50 B
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(
T
j
)
1200
V
1160
V
(BR)DS
1
S
140
1120
1100
1080
1060
1040
1020
1000
980
960
940
920
900
-60
-20
20
60
100 °C 160
T
j
Typ. gate charge
V
GS
=
ƒ
(
Q
Gate
)
parameter:
I
D puls
= 4 A
16
V
V
GS
12
10
8
0,2
V
DS max
0,8
V
DS max
6
4
2
0
0
10 20 30 40 50 nC 65
Q
Gate
Semiconductor Group
8
07/96
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