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BUZ50B View Datasheet(PDF) - Siemens AG

Part Name
Description
View to exact match
BUZ50B
Siemens
Siemens AG Siemens
BUZ50B Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 50 B
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
4.5
Ptot = 78W l
kj i h g
A
ID
3.5
3.0
2.5
2.0
1.5
1.0
f
VGS [V]
a 4.0
b 4.5
e
c 5.0
d 5.5
e 6.0
d f 6.5
g 7.0
h 7.5
i 8.0
j 9.0
k 10.0
c
l 20.0
0.5
0.0
0
b
a
10 20 30 40 50 60 V 80
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
3.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
26
a
b
22
RDS (on) 20
c
d
18
16
14
12
10
e
f
8
gh
ij
6
k
4 VGS [V] =
2
abc
4.05 5.0 5.5
0
0.0 0.4 0.8
def g
6.0 6.5 7.0 7.5
1.2 1.6 2.0
hi j k
8.0 9.0 10.0 20.0
2.4 2.8 A 3.6
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
2.0
A
ID
2.0
gfs
S
1.5
1.0
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
0.5
0.0
0.0 0.5 1.0 1.5 2.0
A
3.0
ID
07/96
 

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