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BUZ358 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ358 SIPMOS ® Power Transistor Siemens
Siemens AG Siemens
BUZ358 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 358
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 1000 V, VGS = 0 V, Tj = 25 °C
VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 3.2 A
Symbol
min.
Values
Unit
typ.
max.
V(BR)DSS
1000 -
VGS(th)
2.1
3
IDSS
-
-
-
10
IGSS
-
10
RDS(on)
-
2.3
V
-
4
µA
1
100
nA
100
2.6
Semiconductor Group
2
01/97
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