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BUZ358 View Datasheet(PDF) - Siemens AG

Part Name
Description
View to exact match
BUZ358
Siemens
Siemens AG Siemens
BUZ358 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 358
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 358
VDS
ID
1000 V 4.5 A
RDS(on)
2.6
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 5.1 A, VDD = 50 V, RGS = 25
L = 62 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3111-A2
Values
Unit
A
4.5
18
5.1
18
mJ
850
± 20
V
W
125
-55 ... + 150 °C
-55 ... + 150
1
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
01/97
 

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