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BUZ357 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ357 SIPMOS ® Power Transistor Siemens
Siemens AG Siemens
BUZ357 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 357
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current IS
TC = 25 °C
-
Inverse diode direct current,pulsed
ISM
TC = 25 °C
-
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 10 A
-
Reverse recovery time
trr
VR = 100 V, IF=lS, diF/dt = 100 A/µs
-
Reverse recovery charge
Qrr
VR = 100 V, IF=lS, diF/dt = 100 A/µs
-
A
-
5.1
-
20
V
1
1.2
µs
1.5
-
µC
6.5
-
Semiconductor Group
4
01/97
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