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BUZ355 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ355 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ355 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 355
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 6 A, VDD = 50 V
RGS = 25 , L = 37.5 mH
750
mJ
650
EAS 600
550
500
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 9 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 20 40 60 80 100 120 140 160 nC 190
QGate
960
V
920
V(BR)DSS
900
880
860
840
820
800
780
760
740
720
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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