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BUZ355 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ355 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ355 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 355
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
14
Ptot
=
125W
l
A
ki
j hg
f
12
ID
11
10
9
8
7
6
5
4
3
2
e
VGS [V]
a 4.0
b 4.5
c 5.0
d d 5.5
e 6.0
f 6.5
g 7.0
c h 7.5
i 8.0
j 9.0
k 10.0
l 20.0
b
1
a
0
0 4 8 12 16 20 24 28 32 V 38
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
16
A
ID
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
5.0
a
b
c
RDS (on) 4.0
3.5
3.0
2.5
2.0
1.5
1.0
VGS [V] =
0.5 a b c d e f
4.05 5.0 5.5 6.0 6.5 7.0
0.0
012345
d
e
f
h
j
g
i
k
ghi j k
7.5 8.0 9.0 10.0 20.0
6 7 8 A 10
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
10
S
gfs
8
7
6
5
4
3
2
1
0
0
2
4
6
8
A
12
ID
Semiconductor Group
6
07/96
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