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BUZ355 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ355 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ355 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 355
Power dissipation
Ptot = ƒ(TC)
130
W
110
Ptot 100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
A
I
D
10 1
tp = 23.0µs
100 µs
Drain current
ID = ƒ(TC)
parameter: VGS 10 V
6.5
A
5.5
ID
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 0
1 ms
10 ms
10 -1
10 0
10 1
Semiconductor Group
DC
10 2
V 10 3
VDS
5
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -7
single pulse
10 -6 10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
07/96
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