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BUZ355 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ355 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ355 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 355
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 800 V, VGS = 0 V, Tj = 25 °C
VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 3.9 A
Symbol
min.
V(BR)DSS
800
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
Unit
typ.
max.
V
-
-
3
4
µA
-
1
10
100
nA
10
100
0.9
1.5
Semiconductor Group
2
07/96
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