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BUZ350 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ350 SIPMOS ® Power Transistor Siemens
Siemens AG Siemens
BUZ350 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 350
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 350
VDS
200 V
ID
22 A
RDS(on)
0.12
Maximum Ratings
Parameter
Continuous drain current
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 22 A, VDD = 50 V, RGS = 25
L = 1.39 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3117-A2
Values
Unit
A
22
88
22
12
mJ
450
± 20
V
W
125
-55 ... + 150 °C
-55 ... + 150
1
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
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