BUZ342 View Datasheet(PDF) - Siemens AG
Part Name
Description
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BUZ342 Datasheet PDF : 9 Pages
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BUZ 342
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 60 A, VGS = 10 V
0.028
Ω
0.024
RDS (on0).022
0.020
0.018
0.016
0.014
0.012
98%
0.010
typ
0.008
0.006
0.004
0.002
0.000
-60 -20
20
60 100 °C 180
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
98%
3.2
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60 -20
20
60 100 °C 180
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 3
C pF
10 3
Ciss
Coss
Crss
10 2
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
A
IF
10 2
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
07/96
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