BUZ 330
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
22 Ptot = 125W l
A
kj ih g f
e
ID
18
16
14
12
10
8
6
VGS [V]
a 4.0
d b 4.5
c 5.0
d 5.5
e 6.0
c f 6.5
g 7.0
h 7.5
i 8.0
j 9.0
k 10.0
b l 20.0
4
2
a
0
0
4
8 12 16 20 V 28
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
13
A
11
ID
10
9
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
1.8
a
b
c
Ω
RDS (on) 1.4
1.2
1.0
0.8
d
e
0.6
f
h
j
g
i
0.4
k
0.2
VGS [V] =
ab
c
d
e
f
4.05 5.0 5.5 6.0 6.5 7.0
0.0
ghi j k
7.5 8.0 9.0 10.0 20.0
0 2 4 6 8 10 12 14 16 A 19
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
15
S
13
gfs
12
11
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
A
12
ID
Semiconductor Group
6
07/96