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Part Name
Description
BUZ323 View Datasheet(PDF) - Siemens AG
Part Name
Description
View to exact match
BUZ323
SIPMOS® Power Transistor
Siemens AG
BUZ323 Datasheet PDF : 9 Pages
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BUZ 323
Typ. output characteristics
I
D
=
ƒ(
V
DS
)
parameter:
t
p
= 80 µs
34
P
tot
= 170W
l
A
kj i
h
g f
28
I
D
24
20
16
12
8
e
V
GS
[V]
a
4.0
b
4.5
d
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
c
h
7.5
i
8.0
j
9.0
k 10.0
b
l 20.0
4
a
0
0
4
8
12
16
V
24
V
DS
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
≥
2 x
I
D
x
R
DS(on)max
15
A
13
I
D
12
11
10
9
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 V 10
V
GS
Typ. drain-source on-resistance
R
DS (on)
=
ƒ(
I
D
)
parameter:
V
GS
0.9
a
b
c
Ω
R
DS (on)
0.7
0.6
0.5
d
0.4
e
f
0.3
hg
ji
k
0.2
0.1
V
GS
[V] =
ab
c
d
e
f
4.05 5.0 5.5 6.0 6.5 7.0
0.0
0
4
8
12
ghi j k
7.5 8.0 9.0 10.0 20.0
16 20 A 26
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
t
p
= 80 µs,
V
DS
≥
2 x
I
D
x R
DS(on)max
18
S
g
fs
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 A 15
I
D
Semiconductor Group
6
07/96
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